Tools & Services
MCASP provides semiconductor-processing services. The following is a list of services provided by MCASP.
- Metal Deposition
- Silicon Dioxide (HDP PECVD) Deposition
- Plasma Etch
- Device/Material Characterization
- Photo Resist Coat, Mask, and Develop
- Dry and Pyrogenic Steam Oxidation
- Wet Cleans
The following is a MCASP equipment list. Scroll down below the list to view some information about each tool and/or its capabilities.
- CEE Spinner and Hotplate
- CVC-601 Sputtering System
- E-beam Evaporation System
- Hitachi S-806C Field Emission Scanning Electron Microscope
- ICCI Furnace
- Karl Suss Contact Aligner
- LAM9400 Transformer Coupled Plasma (TCP) Etch System
- LAM9900 High Density Plasma (HDP) Electron Cyclotron Resonance (ECR) System
- Lapmaster Model 20C Backlapper
- Micro Automation Wafer Saw
- Micromanipulator Wafer Probe
- Mikropack NanoCalc 2000 Reflectometer
- On-Line Technologies FTIR
- Tencor Profilometer
- VEECO FPP-100 Four Point Probe
- Wyko NT1100 Optical Profiler
- Spin speeds up to 6,000 rpm
- Controlled acceleration up to 10,000 rpm/s
- Nickel, titanium, and molybdenum targets currently available
- Other targets available upon request
- Electron beam deposition
- Aluminum, gold, molybdenum, nickel, silicon dioxide, and silver sources currently available
- Other sources available upon request
Hitachi S-806C Field Emission Scanning Electron
Microscope:
- Pyrogenic steam and dry oxidation capabilities
- Capable of 1.0 micron features
- Transformer coupled plasma (TCP) etch system
- Currently configured for NF3, SF6, CHF3, CF4 etch gases
- Capable of etching Si, SiC, SiO2, Si3N4
- Able to etch any size sample
- Click here for images of LAM9400 Etch.
- High density plasma (HDP) electron cyclotron resonance (ECR) system designed for gap fill and planarization.
- SiO2 gap fill deposition and planarization.
- Able to deposit on any size sample.
- Click here for images of SiO2 gap fill deposition and planarization.
Lapmaster Model 20C Backlapper:
- Backlap wafers up to 8”.
- Automatic wafer saw for dicing many types of substrates including silicon and silicon carbide.
- Electrical characterization of devices.
- Reflectometer system, wavelength 400-850 nm, thickness 500 angstroms to 20 microns.
- Able to measure almost any transparent film.
- Able to measure films on many types of substrates including SiC.
- Measurements on product patterned wafers.
- Extensive materials database.
- Wafer size up to 300 mm.
- Ultra-accurate FTIR reflectometry.
- Patented model-based multilayer spectral analysis can extract multiple parameters.
- Patent-pending optics for suppression of backside reflectance artifacts provides accurate measurements.
- High-speed automation mapping measurements.
- Thickness precision of a few nanometers.
- Measurements on product patterned wafers.
- Film thickness and wavelength dependent dielectric function measurements in the infrared.
- Chemical properties, e.g. chemical composition, composition gradients, free carriers, scattering rate, contaminants, etc.
- Physical properties, e.g. transition layer thickness, stress, density, porosity, trench depth, sheet conductance, crystallinity, etc.
- Click here to see a sample FTIR spectra and thickness wafer map.
- Contact step height measurements.
VEECO FPP-100 Four Point Probe:
- Contact four-point probe for sheet resistance measurements.
Wet Cleans:
- Able to clean wafers chemically.
- Accurate 3-D metrology.
- Non-contact measurement for R&D and production.
- Sub-nanometer vertical resolution.
X-Ray Photoelectron
Spectroscopy (XPS):
- Available in our Chemical Engineering Department
- Surface analysis of organic and inorganic materials, depth profiling
- Detects elements from Li-U
- Chemical bonding information
- 0.1% detection limit
- Click here to see a sample energy spectrum.
